FQPF4N25
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- Mfr.Part #
- FQPF4N25
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 2.8A TO220F
- Stock
- 35,879
- In Stock ：
- 35,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Package / Case :
- TO-220-3 Full Pack
- Series :
- QFET®
- Drain to Source Voltage (Vdss) :
- 250V
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 1.75 Ω @ 1.4A, 10V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 32W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2000
- Datasheets
- FQPF4N25
N-Channel Tube 1.75 Ω @ 1.4A, 10V ±30V 200pF @ 25V 5.6nC @ 10V 250V TO-220-3 Full Pack
FQPF4N25 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 200pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQPF4N25 Features
a 250V drain to source voltage (Vdss)
FQPF4N25 Applications
There are a lot of ON Semiconductor
FQPF4N25 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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