FQPF47P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drain to Source Breakdown Voltage :

-60V

Rise Time :

450ns

Threshold Voltage :

-4V

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Number of Elements :

1

Transistor Application :

SWITCHING

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Current Rating :

-30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

26m Ω @ 15A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Length :

10.16mm

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

60V

Transistor Element Material :

SILICON

Number of Pins :

3

Pbfree Code :

yes

Power Dissipation :

62W

Power Dissipation-Max :

62W Tc

Width :

4.7mm

Contact Plating :

Tin

Turn On Delay Time :

50 ns

Weight :

2.27g

Turn-Off Delay Time :

100 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

Avalanche Energy Rating (Eas) :

820 mJ

FET Type :

P-Channel

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Case Connection :

Isolated

Height :

9.19mm

Fall Time (Typ) :

195 ns

Element Configuration :

Single

Continuous Drain Current (ID) :

30A

Published :

2001

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-60V

Drain-source On Resistance-Max :

0.026ohm

Series :

QFET®

REACH SVHC :

No SVHC

Factory Lead Time :

9 Weeks