FQPF45N15V2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

232ns

Gate Charge (Qg) (Max) @ Vgs :

94nC @ 10V

Drain to Source Breakdown Voltage :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Series :

QFET®

FET Type :

N-Channel

Current Rating :

45A

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±30V

Weight :

2.27g

Number of Terminations :

3

Case Connection :

Isolated

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Published :

2013

Power Dissipation :

66W

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

40m Ω @ 22.5A, 10V

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

150V

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

224 ns

Fall Time (Typ) :

246 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.04Ohm

Number of Pins :

3

Turn On Delay Time :

22 ns

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

45A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3030pF @ 25V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

66W Tc

Element Configuration :

Single

Lead Free :

Lead Free