FQPF3N90

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

43W Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

MATTE TIN

Packaging :

Tube

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

2.1A Tc

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

8.4A

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

2.1A

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

900V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pbfree Code :

yes

Pin Count :

3

Mounting Type :

Through Hole

Number of Terminations :

3

Surface Mount :

No

DS Breakdown Voltage-Min :

900V

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

450 mJ

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.25 Ω @ 1.05A, 10V