FQPF3N90
- Mfr.Part #
- FQPF3N90
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 2.1A TO220F
- Stock
- 5,274
- In Stock :
- 5,274
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 2.1A
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 8.4A
- Rds On (Max) @ Id, Vgs :
- 4.25 Ω @ 1.05A, 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Series :
- QFET®
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 900V
- Drain to Source Voltage (Vdss) :
- 900V
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- Power Dissipation-Max :
- 43W Tc
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-220-3 Full Pack
- Pbfree Code :
- yes
- Qualification Status :
- COMMERCIAL
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 910pF @ 25V
- Datasheets
- FQPF3N90

N-Channel Tube 4.25 Ω @ 1.05A, 10V ±30V 910pF @ 25V 26nC @ 10V 900V TO-220-3 Full Pack
FQPF3N90 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 450 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 910pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2.1A.Pulsed drain current is maximum rated peak drain current 8.4A.A normal operation of the DS requires keeping the breakdown voltage above 900V.This transistor requires a drain-source voltage (Vdss) of 900V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQPF3N90 Features
the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 8.4A.
a 900V drain to source voltage (Vdss)
FQPF3N90 Applications
There are a lot of Rochester Electronics, LLC
FQPF3N90 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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