FQPF3N90

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Mfr.Part #
FQPF3N90
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 900V 2.1A TO220F
Stock
5,274
In Stock :
5,274

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
10V
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
2.1A
Terminal Position :
Single
Pulsed Drain Current-Max (IDM) :
8.4A
Rds On (Max) @ Id, Vgs :
4.25 Ω @ 1.05A, 10V
Peak Reflow Temperature (Cel) :
Not Applicable
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSFM-T3
RoHS Status :
ROHS3 Compliant
Series :
QFET®
Number of Terminations :
3
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
FET Type :
N-Channel
DS Breakdown Voltage-Min :
900V
Drain to Source Voltage (Vdss) :
900V
Avalanche Energy Rating (Eas) :
450 mJ
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
2.1A Tc
Power Dissipation-Max :
43W Tc
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Vgs(th) (Max) @ Id :
5V @ 250μA
Vgs (Max) :
±30V
Package / Case :
TO-220-3 Full Pack
Pbfree Code :
yes
Qualification Status :
COMMERCIAL
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Case Connection :
Isolated
Input Capacitance (Ciss) (Max) @ Vds :
910pF @ 25V
Datasheets
FQPF3N90
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF3N90 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, FQPF3N90 pinout, FQPF3N90 datasheet PDF, FQPF3N90 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF3N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF3N90


N-Channel Tube 4.25 Ω @ 1.05A, 10V ±30V 910pF @ 25V 26nC @ 10V 900V TO-220-3 Full Pack

FQPF3N90 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 450 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 910pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2.1A.Pulsed drain current is maximum rated peak drain current 8.4A.A normal operation of the DS requires keeping the breakdown voltage above 900V.This transistor requires a drain-source voltage (Vdss) of 900V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FQPF3N90 Features


the avalanche energy rating (Eas) is 450 mJ
based on its rated peak drain current 8.4A.
a 900V drain to source voltage (Vdss)


FQPF3N90 Applications


There are a lot of Rochester Electronics, LLC
FQPF3N90 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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