FQPF3N80CYDTU

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Mfr.Part #
FQPF3N80CYDTU
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack, Formed Leads
Datasheet
Download
Description
MOSFET N-CH 800V 3A TO220F-3
Stock
2,703
In Stock :
2,703

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Number of Elements :
1
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
12A
Input Capacitance (Ciss) (Max) @ Vds :
705pF @ 25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
5V @ 250μA
DS Breakdown Voltage-Min :
800V
Pbfree Code :
yes
Pin Count :
3
Drain to Source Voltage (Vdss) :
800V
Avalanche Energy Rating (Eas) :
320 mJ
Current - Continuous Drain (Id) @ 25°C :
3A Tc
Number of Terminations :
3
Case Connection :
Isolated
Series :
QFET®
Power Dissipation-Max :
39W Tc
Terminal Position :
Single
Gate Charge (Qg) (Max) @ Vgs :
16.5nC @ 10V
Package / Case :
TO-220-3 Full Pack, Formed Leads
JESD-30 Code :
R-PSFM-T3
Packaging :
Tube
Vgs (Max) :
±30V
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e3
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
Not Applicable
Rds On (Max) @ Id, Vgs :
4.8 Ω @ 1.5A, 10V
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Drain Current-Max (Abs) (ID) :
3A
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Datasheets
FQPF3N80CYDTU
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF3N80CYDTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Formed Leads, Mounting Type:Through Hole, FQPF3N80CYDTU pinout, FQPF3N80CYDTU datasheet PDF, FQPF3N80CYDTU amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF3N80CYDTU ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF3N80CYDTU


N-Channel Tube 4.8 Ω @ 1.5A, 10V ±30V 705pF @ 25V 16.5nC @ 10V 800V TO-220-3 Full Pack, Formed Leads

FQPF3N80CYDTU Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 320 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 705pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [3A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 12A.The DS breakdown voltage should be maintained above 800V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

FQPF3N80CYDTU Features


the avalanche energy rating (Eas) is 320 mJ
based on its rated peak drain current 12A.
a 800V drain to source voltage (Vdss)


FQPF3N80CYDTU Applications


There are a lot of Rochester Electronics, LLC
FQPF3N80CYDTU applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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