FQPF3N80CYDTU
- Mfr.Part #
- FQPF3N80CYDTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 3A TO220F-3
- Stock
- 2,703
- In Stock :
- 2,703
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 12A
- Input Capacitance (Ciss) (Max) @ Vds :
- 705pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- DS Breakdown Voltage-Min :
- 800V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 800V
- Avalanche Energy Rating (Eas) :
- 320 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Series :
- QFET®
- Power Dissipation-Max :
- 39W Tc
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Package / Case :
- TO-220-3 Full Pack, Formed Leads
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Rds On (Max) @ Id, Vgs :
- 4.8 Ω @ 1.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drain Current-Max (Abs) (ID) :
- 3A
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FQPF3N80CYDTU

N-Channel Tube 4.8 Ω @ 1.5A, 10V ±30V 705pF @ 25V 16.5nC @ 10V 800V TO-220-3 Full Pack, Formed Leads
FQPF3N80CYDTU Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 320 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 705pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [3A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 12A.The DS breakdown voltage should be maintained above 800V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
FQPF3N80CYDTU Features
the avalanche energy rating (Eas) is 320 mJ
based on its rated peak drain current 12A.
a 800V drain to source voltage (Vdss)
FQPF3N80CYDTU Applications
There are a lot of Rochester Electronics, LLC
FQPF3N80CYDTU applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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