FQPF3N80CYDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack, Formed Leads

Avalanche Energy Rating (Eas) :

320 mJ

Vgs (Max) :

±30V

DS Breakdown Voltage-Min :

800V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

3A

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Number of Terminations :

3

JESD-609 Code :

e3

Pin Count :

3

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

Terminal Position :

Single

Power Dissipation-Max :

39W Tc

Drain to Source Voltage (Vdss) :

800V

Case Connection :

Isolated

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Number of Elements :

1

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

12A