FQPF3N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Turn-Off Delay Time :

22.5 ns

Pbfree Code :

yes

Fall Time (Typ) :

32 ns

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain to Source Breakdown Voltage :

800V

Voltage - Rated DC :

800V

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

3A

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current Rating :

3A

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

8 Weeks

Length :

10.16mm

Threshold Voltage :

5V

Radiation Hardening :

No

Case Connection :

Isolated

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Weight :

2.27g

Rise Time :

43.5ns

Published :

2003

Height :

9.19mm

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn On Delay Time :

15 ns

JESD-609 Code :

e3

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

39W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

39W Tc

FET Type :

N-Channel

Number of Elements :

1

Element Configuration :

Single

Width :

4.7mm

Operating Mode :

ENHANCEMENT MODE