FQPF3N80

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

8 Weeks

Width :

4.7mm

Drain Current-Max (Abs) (ID) :

3A

Transistor Application :

SWITCHING

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Weight :

2.27g

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

5V

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

22.5 ns

Case Connection :

Isolated

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

39W Tc

Power Dissipation :

39W

Turn On Delay Time :

15 ns

Series :

QFET®

JESD-609 Code :

e3

Fall Time (Typ) :

32 ns

Vgs (Max) :

±30V

Number of Elements :

1

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Current Rating :

3A

Rds On (Max) @ Id, Vgs :

4.8 Ω @ 1.5A, 10V

Lead Free :

Lead Free

Voltage - Rated DC :

800V

Gate Charge (Qg) (Max) @ Vgs :

16.5nC @ 10V

Rise Time :

43.5ns

Packaging :

Tube

Length :

10.16mm

Drain to Source Breakdown Voltage :

800V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

3A

Number of Terminations :

3

Transistor Element Material :

SILICON

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Height :

9.19mm

REACH SVHC :

No SVHC

Mount :

Through Hole