FQPF3N60

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1A, 10V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Pin Count :

3

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

2A

Avalanche Energy Rating (Eas) :

200 mJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

8A

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Mounting Type :

Through Hole

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

34W Tc

Peak Reflow Temperature (Cel) :

Not Applicable

Series :

QFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Terminal Position :

Single

Case Connection :

Isolated

Number of Elements :

1

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 250μA