FQPF3N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Series :

QFET®

Avalanche Energy Rating (Eas) :

200 mJ

DS Breakdown Voltage-Min :

600V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 1A, 10V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Drain Current-Max (Abs) (ID) :

2A

Pulsed Drain Current-Max (IDM) :

8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

Not Applicable

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Vgs (Max) :

±30V

Power Dissipation-Max :

34W Tc

Terminal Position :

Single

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE