FQPF3N40
- Mfr.Part #
- FQPF3N40
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 1.6A TO220F
- Stock
- 19,870
- In Stock :
- 19,870
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Tc
- Mounting Type :
- Through Hole
- Terminal Finish :
- MATTE TIN
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 7.5nC @ 10V
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 400V
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 6.4A
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 3.4 Ω @ 800mA, 10V
- Power Dissipation-Max :
- 20W Tc
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain Current-Max (Abs) (ID) :
- 1.6A
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Qualification Status :
- COMMERCIAL
- Series :
- QFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- DS Breakdown Voltage-Min :
- 400V
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Number of Elements :
- 1
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- FQPF3N40

N-Channel Tube 3.4 Ω @ 800mA, 10V ±30V 230pF @ 25V 7.5nC @ 10V 400V TO-220-3 Full Pack
FQPF3N40 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 230pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6.4A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FQPF3N40 Features
the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 6.4A.
a 400V drain to source voltage (Vdss)
FQPF3N40 Applications
There are a lot of Rochester Electronics, LLC
FQPF3N40 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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