FQPF3N40

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Mfr.Part #
FQPF3N40
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 400V 1.6A TO220F
Stock
19,870
In Stock :
19,870

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
1.6A Tc
Mounting Type :
Through Hole
Terminal Finish :
MATTE TIN
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Gate Charge (Qg) (Max) @ Vgs :
7.5nC @ 10V
Reach Compliance Code :
Unknown
Pin Count :
3
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
400V
Packaging :
Tube
Avalanche Energy Rating (Eas) :
120 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
6.4A
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
3.4 Ω @ 800mA, 10V
Power Dissipation-Max :
20W Tc
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
Not Applicable
Drain Current-Max (Abs) (ID) :
1.6A
Package / Case :
TO-220-3 Full Pack
Vgs(th) (Max) @ Id :
5V @ 250μA
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Qualification Status :
COMMERCIAL
Series :
QFET®
Input Capacitance (Ciss) (Max) @ Vds :
230pF @ 25V
DS Breakdown Voltage-Min :
400V
JESD-30 Code :
R-PSFM-T3
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±30V
RoHS Status :
ROHS3 Compliant
Terminal Position :
Single
Number of Elements :
1
Case Connection :
Isolated
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
FQPF3N40
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF3N40 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, FQPF3N40 pinout, FQPF3N40 datasheet PDF, FQPF3N40 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF3N40 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF3N40


N-Channel Tube 3.4 Ω @ 800mA, 10V ±30V 230pF @ 25V 7.5nC @ 10V 400V TO-220-3 Full Pack

FQPF3N40 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 120 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 230pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 6.4A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

FQPF3N40 Features


the avalanche energy rating (Eas) is 120 mJ
based on its rated peak drain current 6.4A.
a 400V drain to source voltage (Vdss)


FQPF3N40 Applications


There are a lot of Rochester Electronics, LLC
FQPF3N40 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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