FQPF3N25

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Rise Time :

25ns

Turn On Delay Time :

6.6 ns

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Power Dissipation-Max :

27W Tc

Pulsed Drain Current-Max (IDM) :

9.2A

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

40 mJ

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.15A, 10V

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Packaging :

Tube

Drain to Source Breakdown Voltage :

250V

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.95

ECCN Code :

EAR99

Power Dissipation :

27W

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Published :

2013

Element Configuration :

Single

Turn-Off Delay Time :

5.5 ns

Continuous Drain Current (ID) :

2.3A

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Voltage - Rated DC :

250V

Series :

QFET®

Mount :

Through Hole

FET Type :

N-Channel

Weight :

2.27g

Fall Time (Typ) :

20 ns

Current Rating :

2.3A

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 250μA

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)