FQPF3N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 10V

Weight :

2.27g

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

JESD-609 Code :

e3

Case Connection :

Isolated

Fall Time (Typ) :

20 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

HTS Code :

8541.29.00.95

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Vgs (Max) :

±30V

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Number of Terminations :

3

Rise Time :

25ns

Pbfree Code :

yes

Turn-Off Delay Time :

5.5 ns

Voltage - Rated DC :

250V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Turn On Delay Time :

6.6 ns

ECCN Code :

EAR99

Mounting Type :

Through Hole

Series :

QFET®

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.15A, 10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

250V

Published :

2013

Pulsed Drain Current-Max (IDM) :

9.2A

Package / Case :

TO-220-3 Full Pack

Avalanche Energy Rating (Eas) :

40 mJ

Factory Lead Time :

4 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

27W

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Current Rating :

2.3A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Continuous Drain Current (ID) :

2.3A

Power Dissipation-Max :

27W Tc

Lead Free :

Lead Free

Radiation Hardening :

No

FET Type :

N-Channel

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)