FQPF3N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

27W Tc

Factory Lead Time :

4 Weeks

Lead Free :

Lead Free

Weight :

2.27g

Packaging :

Tube

Fall Time (Typ) :

20 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

JESD-609 Code :

e3

Turn-Off Delay Time :

5.5 ns

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 1.15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Vgs (Max) :

±30V

Number of Pins :

3

HTS Code :

8541.29.00.95

Power Dissipation :

27W

Drain to Source Breakdown Voltage :

250V

Current Rating :

2.3A

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 10V

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.3A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Turn On Delay Time :

6.6 ns

Rise Time :

25ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

40 mJ

Voltage - Rated DC :

250V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

9.2A

Element Configuration :

Single

ECCN Code :

EAR99

Mounting Type :

Through Hole