FQPF34N20L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Terminal Finish :

Tin

Rds On (Max) @ Id, Vgs :

75m Ω @ 8.75A, 10V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 5V

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Surface Mount :

No

Power Dissipation-Max :

55W Tc

DS Breakdown Voltage-Min :

200V

Drain-source On Resistance-Max :

0.08Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

70A

Current - Continuous Drain (Id) @ 25°C :

17.5A Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Pin Count :

3

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

3.9pF @ 25V

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

17.5A

Vgs(th) (Max) @ Id :

2V @ 250μA

Reach Compliance Code :

Unknown

Terminal Position :

Single

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Avalanche Energy Rating (Eas) :

640 mJ