FQPF34N20L
- Mfr.Part #
- FQPF34N20L
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 17.5A TO220F
- Stock
- 27,785
- In Stock :
- 27,785
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.08Ohm
- Avalanche Energy Rating (Eas) :
- 640 mJ
- Package / Case :
- TO-220-3 Full Pack
- Pin Count :
- 3
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 200V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Power Dissipation-Max :
- 55W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- QFET®
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 200V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 8.75A, 10V
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 5V
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Case Connection :
- Isolated
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 3.9pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Pulsed Drain Current-Max (IDM) :
- 70A
- Terminal Finish :
- Tin
- Number of Terminations :
- 3
- Drain Current-Max (Abs) (ID) :
- 17.5A
- Datasheets
- FQPF34N20L
FQPF34N20L Documents

N-Channel Tube 75m Ω @ 8.75A, 10V ±20V 3.9pF @ 25V 72nC @ 5V 200V TO-220-3 Full Pack
FQPF34N20L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 640 mJ.A device's maximum input capacitance is 3.9pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 17.5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
FQPF34N20L Features
the avalanche energy rating (Eas) is 640 mJ
based on its rated peak drain current 70A.
a 200V drain to source voltage (Vdss)
FQPF34N20L Applications
There are a lot of Rochester Electronics, LLC
FQPF34N20L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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