FQPF33N10L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Application :

SWITCHING

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

Terminal Finish :

Tin (Sn)

Current Rating :

18A

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.055Ohm

Height :

16.07mm

Voltage - Rated DC :

100V

Rds On (Max) @ Id, Vgs :

52m Ω @ 9A, 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

70 ns

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Factory Lead Time :

10 Weeks

Length :

10.36mm

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mount :

Through Hole

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Through Hole

Weight :

2.27g

Packaging :

Tube

Rise Time :

470ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation :

41W

Pulsed Drain Current-Max (IDM) :

72A

Power Dissipation-Max :

41W Tc

Published :

2013

Case Connection :

Isolated

Vgs (Max) :

±20V

Width :

4.9mm

Fall Time (Typ) :

120 ns

Number of Terminations :

3

Turn On Delay Time :

17 ns

JESD-609 Code :

e3

Lead Free :

Lead Free

Element Configuration :

Single

Continuous Drain Current (ID) :

18A

Series :

QFET®