FQPF33N10L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

18A

Width :

4.9mm

Mounting Type :

Through Hole

Series :

QFET®

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.36mm

Case Connection :

Isolated

Voltage - Rated DC :

100V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 5V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

FET Type :

N-Channel

Number of Elements :

1

Drain-source On Resistance-Max :

0.055Ohm

Continuous Drain Current (ID) :

18A

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Weight :

2.27g

Pulsed Drain Current-Max (IDM) :

72A

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

100V

Power Dissipation :

41W

Turn-Off Delay Time :

70 ns

Turn On Delay Time :

17 ns

Fall Time (Typ) :

120 ns

Rds On (Max) @ Id, Vgs :

52m Ω @ 9A, 10V

Factory Lead Time :

10 Weeks

Height :

16.07mm

Radiation Hardening :

No

Element Configuration :

Single

Rise Time :

470ns

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Packaging :

Tube

Published :

2013

ECCN Code :

EAR99

Power Dissipation-Max :

41W Tc

Number of Pins :

3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Package / Case :

TO-220-3 Full Pack