FQPF32N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Turn-Off Delay Time :

245 ns

Element Configuration :

Single

Rise Time :

270ns

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

210 ns

Transistor Element Material :

SILICON

Packaging :

Tube

Turn On Delay Time :

25 ns

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

955 mJ

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Weight :

2.27g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

50W Tc

Radiation Hardening :

No

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

82m Ω @ 14A, 10V

Published :

2013

Number of Terminations :

3

Case Connection :

Isolated

Number of Elements :

1

Number of Pins :

3

Drain-source On Resistance-Max :

0.082Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Voltage - Rated DC :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

2220pF @ 25V

Series :

QFET®

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

28A

Current Rating :

28A

Power Dissipation :

50W

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING