FQPF30N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Element Configuration :

Single

Radiation Hardening :

No

Mounting Type :

Through Hole

Mount :

Through Hole

Voltage - Rated DC :

60V

Published :

2013

Continuous Drain Current (ID) :

22.5A

Factory Lead Time :

4 Weeks

Weight :

2.27g

Drain-source On Resistance-Max :

0.045Ohm

Case Connection :

Isolated

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

110 ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

22.5A Tc

Rds On (Max) @ Id, Vgs :

35m Ω @ 11.3A, 10V

FET Type :

N-Channel

Turn On Delay Time :

15 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 25V

JESD-609 Code :

e3

Series :

QFET®

Vgs (Max) :

±20V

Rise Time :

210ns

Current Rating :

22.5A

Packaging :

Tube

Length :

10.36mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

38W Tc

Pulsed Drain Current-Max (IDM) :

90A

Turn-Off Delay Time :

60 ns

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Width :

4.9mm

Height :

16.07mm

ECCN Code :

EAR99

Power Dissipation :

38W

Number of Elements :

1