FQPF30N06
- Mfr.Part #
- FQPF30N06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 21A TO220F
- Stock
- 25,736
- In Stock :
- 25,736
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 38W Tc
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Series :
- QFET®
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 60 ns
- Current - Continuous Drain (Id) @ 25°C :
- 22.5A Tc
- Fall Time (Typ) :
- 110 ns
- Height :
- 16.07mm
- Rise Time :
- 210ns
- Turn On Delay Time :
- 15 ns
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 11.3A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Drain to Source Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1040pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 90A
- FET Type :
- N-Channel
- Current Rating :
- 22.5A
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Case Connection :
- Isolated
- Length :
- 10.36mm
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2013
- Weight :
- 2.27g
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain-source On Resistance-Max :
- 0.045Ohm
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 38W
- Continuous Drain Current (ID) :
- 22.5A
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.9mm
- Lead Free :
- Lead Free
- Datasheets
- FQPF30N06

N-Channel Tube 35m Ω @ 11.3A, 10V ±20V 1040pF @ 25V 20nC @ 5V TO-220-3 Full Pack
FQPF30N06L Description
Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This advanced MOSFET technology has been specifically designed to offer enhanced switching performance, strong avalanche energy strength, and reduced on-state resistance. These components are appropriate for applications requiring switched mode power supplies, audio amplifiers, DC motor control, and variable switching power.
FQPF30N06L Features
?2.5 A, 60 V, RDS(on)= 35 mQ at 10 V, lD= 11.3 A, max.
? Minimal Gate Fee (Typ. 15 nC)
?Small Crss (Typ 50 pF)
?Avalanche tested in full
Maximum Junction Temperature Rating of 175°C
FQPF30N06L Applications
Switching applications
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