FQPF2P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Packaging :

Tube

Mounting Type :

Through Hole

Number of Terminations :

3

Surface Mount :

No

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

1.8A

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

250V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Drain-source On Resistance-Max :

4Ohm

Drain to Source Voltage (Vdss) :

250V

Pulsed Drain Current-Max (IDM) :

7.2A

Avalanche Energy Rating (Eas) :

120 mJ

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

32W Tc

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

Not Applicable

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

FET Type :

P-Channel

Pbfree Code :

yes

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

4 Ω @ 900mA, 10V

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Series :

QFET®