FQPF2P25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

FET Type :

P-Channel

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

4 Ω @ 900mA, 10V

Case Connection :

Isolated

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

250V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Surface Mount :

No

Pbfree Code :

yes

Number of Elements :

1

Power Dissipation-Max :

32W Tc

Drain-source On Resistance-Max :

4Ohm

Avalanche Energy Rating (Eas) :

120 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

DS Breakdown Voltage-Min :

250V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

7.2A

Peak Reflow Temperature (Cel) :

Not Applicable

Mounting Type :

Through Hole

Number of Terminations :

3

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Series :

QFET®

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Drain Current-Max (Abs) (ID) :

1.8A

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V