FQPF2NA90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

6.8A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

5.8 Ω @ 850mA, 10V

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Terminal Position :

Single

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Power Dissipation-Max :

39W Tc

Case Connection :

Isolated

Pin Count :

3

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

310 mJ

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

900V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1.7A

DS Breakdown Voltage-Min :

900V