FQPF2NA90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

900V

Surface Mount :

No

Number of Elements :

1

Mounting Type :

Through Hole

Terminal Position :

Single

Series :

QFET®

JESD-609 Code :

e3

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Transistor Element Material :

SILICON

Case Connection :

Isolated

FET Type :

N-Channel

Packaging :

Tube

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Pulsed Drain Current-Max (IDM) :

6.8A

Power Dissipation-Max :

39W Tc

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain Current-Max (Abs) (ID) :

1.7A

Avalanche Energy Rating (Eas) :

310 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

900V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5.8 Ω @ 850mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL