FQPF2N90
- Mfr.Part #
- FQPF2N90
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.4A TO220F
- Stock
- 6,177
- In Stock :
- 6,177
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Drain to Source Voltage (Vdss) :
- 900V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 7.2 Ω @ 700mA, 10V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 35W Tc
- Qualification Status :
- COMMERCIAL
- Surface Mount :
- No
- Packaging :
- Tube
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 170 mJ
- Reach Compliance Code :
- Unknown
- Pulsed Drain Current-Max (IDM) :
- 5.6A
- DS Breakdown Voltage-Min :
- 900V
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- QFET®
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 1.4A
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- Case Connection :
- Isolated
- Datasheets
- FQPF2N90
FQPF2N90 Documents

N-Channel Tube 7.2 Ω @ 700mA, 10V ±30V 500pF @ 25V 15nC @ 10V 900V TO-220-3 Full Pack
FQPF2N90 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 170 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 1.4A.Peak drain current is 5.6A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQPF2N90 Features
the avalanche energy rating (Eas) is 170 mJ
based on its rated peak drain current 5.6A.
a 900V drain to source voltage (Vdss)
FQPF2N90 Applications
There are a lot of Rochester Electronics, LLC
FQPF2N90 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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