FQPF2N90
- Mfr.Part #
- FQPF2N90
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 1.4A TO220F
- Stock
- 6,177
- In Stock :
- 6,177
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 900V
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 7.2 Ω @ 700mA, 10V
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- QFET®
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- MATTE TIN
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 35W Tc
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 170 mJ
- Drain Current-Max (Abs) (ID) :
- 1.4A
- Input Capacitance (Ciss) (Max) @ Vds :
- 500pF @ 25V
- Surface Mount :
- No
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 900V
- Qualification Status :
- COMMERCIAL
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Pulsed Drain Current-Max (IDM) :
- 5.6A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-220-3 Full Pack
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- FQPF2N90

N-Channel Tube 7.2 Ω @ 700mA, 10V ±30V 500pF @ 25V 15nC @ 10V 900V TO-220-3 Full Pack
FQPF2N90 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 170 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 500pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 1.4A.Peak drain current is 5.6A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 900V.For this transistor to work, a voltage 900V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQPF2N90 Features
the avalanche energy rating (Eas) is 170 mJ
based on its rated peak drain current 5.6A.
a 900V drain to source voltage (Vdss)
FQPF2N90 Applications
There are a lot of Rochester Electronics, LLC
FQPF2N90 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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