FQPF2N90

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Power Dissipation-Max :

35W Tc

Avalanche Energy Rating (Eas) :

170 mJ

Drain Current-Max (Abs) (ID) :

1.4A

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 25V

Drain to Source Voltage (Vdss) :

900V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

5.6A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

JESD-30 Code :

R-PSFM-T3

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

7.2 Ω @ 700mA, 10V

Surface Mount :

No

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Finish :

MATTE TIN

Series :

QFET®

Pbfree Code :

yes

DS Breakdown Voltage-Min :

900V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Packaging :

Tube

Number of Elements :

1