FQPF2N80YDTU
- Mfr.Part #
- FQPF2N80YDTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1.5A TO220F-3
- Stock
- 1,514
- In Stock :
- 1,514
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Continuous Drain Current (ID) :
- 1.5A
- Current - Continuous Drain (Id) @ 25°C :
- 1.5A Tc
- Series :
- QFET®
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 6.3 Ω @ 750mA, 10V
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 800V
- Number of Channels :
- 1
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3 Full Pack, Formed Leads
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- Turn On Delay Time :
- 12 ns
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 25 ns
- Weight :
- 2.565g
- Power Dissipation-Max :
- 35W Tc
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 30ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 28 ns
- Number of Pins :
- 3
- Reach Compliance Code :
- not_compliant
- Width :
- 4.9mm
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Element Configuration :
- Single
- Height :
- 16.07mm
- Packaging :
- Tube
- Length :
- 10.36mm
- Datasheets
- FQPF2N80YDTU

N-Channel Tube 6.3 Ω @ 750mA, 10V ±30V 550pF @ 25V 15nC @ 10V TO-220-3 Full Pack, Formed Leads
FQPF2N80YDTU Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 550pF @ 25V.This device conducts a continuous drain current (ID) of 1.5A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 25 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FQPF2N80YDTU Features
a continuous drain current (ID) of 1.5A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 25 ns
FQPF2N80YDTU Applications
There are a lot of ON Semiconductor
FQPF2N80YDTU applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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