FQPF2N80YDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

4.9mm

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Rise Time :

30ns

Fall Time (Typ) :

28 ns

Drain to Source Breakdown Voltage :

800V

Turn On Delay Time :

12 ns

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 750mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Factory Lead Time :

4 Weeks

Power Dissipation-Max :

35W Tc

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Height :

16.07mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Weight :

2.565g

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Turn-Off Delay Time :

25 ns

Package / Case :

TO-220-3 Full Pack, Formed Leads

Mount :

Through Hole

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

1.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Series :

QFET®

Length :

10.36mm

Number of Channels :

1

Pbfree Code :

yes

Reach Compliance Code :

not_compliant