FQPF2N70

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

28W Tc

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Power Dissipation :

28W

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Vgs (Max) :

±30V

Rise Time :

80ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

8A

Fall Time (Typ) :

70 ns

Case Connection :

Isolated

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

2A

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Factory Lead Time :

5 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6.3 Ω @ 1A, 10V

Current Rating :

2A

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

700V

Series :

QFET®

Pbfree Code :

yes

Element Configuration :

Single

Weight :

2.27g

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

2A

Number of Pins :

3

Turn-Off Delay Time :

50 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Packaging :

Tube

Number of Terminations :

3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Voltage - Rated DC :

700V

RoHS Status :

ROHS3 Compliant