FQPF2N70
- Mfr.Part #
- FQPF2N70
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 2A TO220F
- Stock
- 1,029
- In Stock :
- 1,029
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 70 ns
- Drain to Source Breakdown Voltage :
- 700V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 2A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Published :
- 2013
- Current Rating :
- 2A
- Factory Lead Time :
- 5 Weeks
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3 Full Pack
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 6.3 Ω @ 1A, 10V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Series :
- QFET®
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Power Dissipation :
- 28W
- Power Dissipation-Max :
- 28W Tc
- Turn-Off Delay Time :
- 50 ns
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Rise Time :
- 80ns
- Voltage - Rated DC :
- 700V
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 2A
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Pulsed Drain Current-Max (IDM) :
- 8A
- Weight :
- 2.27g
- JEDEC-95 Code :
- TO-220AB
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Datasheets
- FQPF2N70

N-Channel Tube 6.3 Ω @ 1A, 10V ±30V 350pF @ 25V 11nC @ 10V TO-220-3 Full Pack
FQPF2N70 Description
The FQPF2N70 power MOSFET is manufactured in accordance with the planar stripe and DMOS technologies developed by ON Semiconductor Semiconductor. Using this advanced MOSFET technology, the on-state resistance is reduced, and superior switching performance and avalanche energy strength are enhanced. The FQPF2N70 MOSFET is suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts.
FQPF2N70 Features
-
Low Crss ( Typ. 5pF)
-
100% avalanche tested
-
2A, 700V, RDS(on) = 6.3Ω(Max.) @VGS = 10 V, ID = 1.0A
-
Low gate charge ( Typ. 9nC)
FQPF2N70 Applications
-
Relay drivers
-
Other Industrial
-
Microphone preamplifiers
-
Lighting systems
-
Audio Amplifiers
-
Signal Amplifiers
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