FQPF2N70
- Mfr.Part #
- FQPF2N70
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 2A TO220F
- Stock
- 1,029
- In Stock :
- 1,029
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 700V
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Rise Time :
- 80ns
- Factory Lead Time :
- 5 Weeks
- Weight :
- 2.27g
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 50 ns
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 6.3 Ω @ 1A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 28W Tc
- Continuous Drain Current (ID) :
- 2A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 2A
- Package / Case :
- TO-220-3 Full Pack
- Packaging :
- Tube
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 350pF @ 25V
- Published :
- 2013
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 2A
- Fall Time (Typ) :
- 70 ns
- Pbfree Code :
- yes
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 8A
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 700V
- Series :
- QFET®
- Vgs (Max) :
- ±30V
- Power Dissipation :
- 28W
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Datasheets
- FQPF2N70
FQPF2N70 Documents

N-Channel Tube 6.3 Ω @ 1A, 10V ±30V 350pF @ 25V 11nC @ 10V TO-220-3 Full Pack
FQPF2N70 Description
The FQPF2N70 power MOSFET is manufactured in accordance with the planar stripe and DMOS technologies developed by ON Semiconductor Semiconductor. Using this advanced MOSFET technology, the on-state resistance is reduced, and superior switching performance and avalanche energy strength are enhanced. The FQPF2N70 MOSFET is suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts.
FQPF2N70 Features
-
Low Crss ( Typ. 5pF)
-
100% avalanche tested
-
2A, 700V, RDS(on) = 6.3Ω(Max.) @VGS = 10 V, ID = 1.0A
-
Low gate charge ( Typ. 9nC)
FQPF2N70 Applications
-
Relay drivers
-
Other Industrial
-
Microphone preamplifiers
-
Lighting systems
-
Audio Amplifiers
-
Signal Amplifiers
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