FQPF2N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

2A

Number of Pins :

3

Voltage - Rated DC :

600V

Drain to Source Breakdown Voltage :

600V

Weight :

2.27g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Published :

2003

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Packaging :

Tube

Turn-Off Delay Time :

24 ns

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

23W Tc

Transistor Element Material :

SILICON

Number of Elements :

1

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

23W

Drain Current-Max (Abs) (ID) :

2A

FET Type :

N-Channel

Radiation Hardening :

No

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 9 hours ago)

Turn On Delay Time :

9 ns

Length :

10.16mm

Mount :

Through Hole

Height :

9.19mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Rise Time :

25ns

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Width :

4.7mm

ECCN Code :

EAR99

Mounting Type :

Through Hole

Fall Time (Typ) :

28 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

2A

Rds On (Max) @ Id, Vgs :

4.7 Ω @ 1A, 10V

Element Configuration :

Single

Pbfree Code :

yes

Transistor Application :

SWITCHING

Factory Lead Time :

4 Weeks

Package / Case :

TO-220-3 Full Pack

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 25V

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

8A

Resistance :

4.7ohm