FQPF2N50

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

5.2A

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Terminal Position :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

1.3A

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

JESD-609 Code :

e3

Vgs (Max) :

±30V

Power Dissipation-Max :

20W Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

120 mJ

Package / Case :

TO-220-3 Full Pack

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Terminal Finish :

Tin

Reach Compliance Code :

Unknown

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

500V

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

1.3A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Series :

QFET®

DS Breakdown Voltage-Min :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

5.3 Ω @ 650mA, 10V

Packaging :

Tube

Pin Count :

3

Case Connection :

Isolated