FQPF2N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

Unknown

Power Dissipation-Max :

16W Tc

Surface Mount :

No

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 25V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

5.36A

Number of Terminations :

3

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Elements :

1

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

3.7 Ω @ 670mA, 10V

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

1.34A

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 10V

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

100 mJ

DS Breakdown Voltage-Min :

300V

Current - Continuous Drain (Id) @ 25°C :

1.34A Tc

Drain to Source Voltage (Vdss) :

300V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pin Count :

3

Vgs (Max) :

±30V

Qualification Status :

COMMERCIAL