FQPF27P06

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Mfr.Part #
FQPF27P06
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET P-CH 60V 17A TO220F
Stock
23,593
In Stock :
23,593

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2001
Drain to Source Voltage (Vdss) :
60V
Packaging :
Tube
Mounting Type :
Through Hole
Turn-Off Delay Time :
30 ns
Pbfree Code :
yes
Package / Case :
TO-220-3 Full Pack
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Current Rating :
-17A
Height :
16.3mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation :
47W
Transistor Element Material :
SILICON
Fall Time (Typ) :
90 ns
Pulsed Drain Current-Max (IDM) :
68A
Element Configuration :
Single
Drain to Source Breakdown Voltage :
-60V
Resistance :
70mOhm
Transistor Application :
SWITCHING
Threshold Voltage :
-2V
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Avalanche Energy Rating (Eas) :
560 mJ
Case Connection :
Isolated
Voltage - Rated DC :
-60V
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Rise Time :
185ns
Number of Terminations :
3
Factory Lead Time :
9 Weeks
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
47W Tc
Rds On (Max) @ Id, Vgs :
70m Ω @ 8.5A, 10V
Gate to Source Voltage (Vgs) :
25V
Continuous Drain Current (ID) :
17A
Series :
QFET®
Width :
4.7mm
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Weight :
2.27g
Length :
10.67mm
Mount :
Through Hole
Operating Temperature :
-55°C~175°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 25V
FET Type :
P-Channel
Vgs (Max) :
±25V
Turn On Delay Time :
18 ns
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Number of Elements :
1
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF27P06 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, FQPF27P06 pinout, FQPF27P06 datasheet PDF, FQPF27P06 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF27P06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF27P06


P-Channel Tube 70m Ω @ 8.5A, 10V ±25V 1400pF @ 25V 43nC @ 10V 60V TO-220-3 Full Pack

FQPF27P06 Description


This P-channel FQPF27P06 enhanced mode power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.


FQPF27P06  Features


 -17A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -8.5A

Low gate charge ( Typ. 33nC)

Low Crss ( Typ. 120pF)

100% avalanche tested

175°C maximum junction temperature rating


FQPF27P06  Applications


Other Audio & Video

 



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