FQPF27P06
- Mfr.Part #
- FQPF27P06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 17A TO220F
- Stock
- 23,593
- In Stock :
- 23,593
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2001
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 30 ns
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Current Rating :
- -17A
- Height :
- 16.3mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 47W
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 90 ns
- Pulsed Drain Current-Max (IDM) :
- 68A
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- -60V
- Resistance :
- 70mOhm
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- -2V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Avalanche Energy Rating (Eas) :
- 560 mJ
- Case Connection :
- Isolated
- Voltage - Rated DC :
- -60V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 185ns
- Number of Terminations :
- 3
- Factory Lead Time :
- 9 Weeks
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 47W Tc
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 8.5A, 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Continuous Drain Current (ID) :
- 17A
- Series :
- QFET®
- Width :
- 4.7mm
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 2.27g
- Length :
- 10.67mm
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- FET Type :
- P-Channel
- Vgs (Max) :
- ±25V
- Turn On Delay Time :
- 18 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Elements :
- 1
- Datasheets
- FQPF27P06
FQPF27P06 Documents

P-Channel Tube 70m Ω @ 8.5A, 10V ±25V 1400pF @ 25V 43nC @ 10V 60V TO-220-3 Full Pack
FQPF27P06 Description
This P-channel FQPF27P06 enhanced mode power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQPF27P06 Features
-17A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -8.5A
Low gate charge ( Typ. 33nC)
Low Crss ( Typ. 120pF)
100% avalanche tested
175°C maximum junction temperature rating
FQPF27P06 Applications
Other Audio & Video
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