FQPF27P06
- Mfr.Part #
- FQPF27P06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 23,593
- In Stock :
- 23,593
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Series :
- QFET®
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Breakdown Voltage :
- -60V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 17A
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 25V
- Current Rating :
- -17A
- FET Type :
- P-Channel
- Radiation Hardening :
- No
- Length :
- 10.67mm
- Packaging :
- Tube
- Factory Lead Time :
- 9 Weeks
- Avalanche Energy Rating (Eas) :
- 560 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 30 ns
- Fall Time (Typ) :
- 90 ns
- Terminal Finish :
- Tin (Sn)
- Weight :
- 2.27g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 47W Tc
- Pulsed Drain Current-Max (IDM) :
- 68A
- Threshold Voltage :
- -2V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 47W
- Drain to Source Voltage (Vdss) :
- 60V
- Published :
- 2001
- Vgs (Max) :
- ±25V
- Case Connection :
- Isolated
- Voltage - Rated DC :
- -60V
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 8.5A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Resistance :
- 70mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 18 ns
- Rise Time :
- 185ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Height :
- 16.3mm
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 4.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Datasheets
- FQPF27P06
FQPF27P06 Documents

P-Channel Tube 70m Ω @ 8.5A, 10V ±25V 1400pF @ 25V 43nC @ 10V 60V TO-220-3 Full Pack
FQPF27P06 Description
This P-channel FQPF27P06 enhanced mode power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQPF27P06 Features
-17A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -8.5A
Low gate charge ( Typ. 33nC)
Low Crss ( Typ. 120pF)
100% avalanche tested
175°C maximum junction temperature rating
FQPF27P06 Applications
Other Audio & Video
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