FQPF27P06
- Mfr.Part #
- FQPF27P06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 23,593
- In Stock :
- 23,593
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 25V
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Width :
- 4.7mm
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Series :
- QFET®
- Drain to Source Breakdown Voltage :
- -60V
- Number of Pins :
- 3
- Fall Time (Typ) :
- 90 ns
- Mount :
- Through Hole
- Power Dissipation-Max :
- 47W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 8.5A, 10V
- Weight :
- 2.27g
- Resistance :
- 70mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Height :
- 16.3mm
- Factory Lead Time :
- 9 Weeks
- Length :
- 10.67mm
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 17A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 68A
- Current Rating :
- -17A
- Turn On Delay Time :
- 18 ns
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 560 mJ
- Threshold Voltage :
- -2V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 185ns
- Power Dissipation :
- 47W
- Vgs (Max) :
- ±25V
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Voltage - Rated DC :
- -60V
- Published :
- 2001
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Turn-Off Delay Time :
- 30 ns
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Datasheets
- FQPF27P06

P-Channel Tube 70m Ω @ 8.5A, 10V ±25V 1400pF @ 25V 43nC @ 10V 60V TO-220-3 Full Pack
FQPF27P06 Description
This P-channel FQPF27P06 enhanced mode power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, audio amplifiers, DC motor control and variable switching power applications.
FQPF27P06 Features
-17A, -60V, RDS(on) = 26mΩ(Max.) @VGS = -10 V, ID = -8.5A
Low gate charge ( Typ. 33nC)
Low Crss ( Typ. 120pF)
100% avalanche tested
175°C maximum junction temperature rating
FQPF27P06 Applications
Other Audio & Video
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