FQPF27N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Rise Time :

270ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Current Rating :

14A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

250V

Vgs (Max) :

±30V

Contact Plating :

Tin

Packaging :

Tube

Lead Free :

Lead Free

Number of Pins :

3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

110m Ω @ 7A, 10V

Case Connection :

Isolated

Element Configuration :

Single

Voltage - Rated DC :

250V

Power Dissipation :

55W

Avalanche Energy Rating (Eas) :

600 mJ

Pulsed Drain Current-Max (IDM) :

56A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Fall Time (Typ) :

120 ns

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 25V

Continuous Drain Current (ID) :

14A

Number of Elements :

1

Turn On Delay Time :

32 ns

FET Type :

N-Channel

Power Dissipation-Max :

55W Tc

Series :

QFET®

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Mounting Type :

Through Hole

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

9 Weeks

Gate to Source Voltage (Vgs) :

30V

Published :

2013

JESD-609 Code :

e3

Turn-Off Delay Time :

80 ns

Weight :

2.27g