FQPF27N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

80 ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

110m Ω @ 7A, 10V

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

56A

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Pbfree Code :

yes

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Avalanche Energy Rating (Eas) :

600 mJ

Mount :

Through Hole

Number of Elements :

1

Power Dissipation :

55W

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Power Dissipation-Max :

55W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Contact Plating :

Tin

Factory Lead Time :

9 Weeks

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

14A

Weight :

2.27g

Continuous Drain Current (ID) :

14A

Rise Time :

270ns

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

250V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Fall Time (Typ) :

120 ns

Drain to Source Breakdown Voltage :

250V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Published :

2013

Case Connection :

Isolated

Turn On Delay Time :

32 ns

Packaging :

Tube

JESD-609 Code :

e3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Vgs (Max) :

±30V