FQPF22N30

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

35 ns

Number of Terminations :

3

Current Rating :

12A

Package / Case :

TO-220-3 Full Pack

Lead Free :

Lead Free

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

12A

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

300V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2013

FET Type :

N-Channel

Vgs (Max) :

±30V

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Weight :

2.27g

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Power Dissipation-Max :

56W Tc

Pulsed Drain Current-Max (IDM) :

48A

Drain to Source Breakdown Voltage :

300V

JESD-609 Code :

e3

Mount :

Through Hole

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pbfree Code :

yes

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Turn-Off Delay Time :

85 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

160m Ω @ 6A, 10V

Power Dissipation :

56W

Fall Time (Typ) :

100 ns

Terminal Finish :

Tin (Sn)

Rise Time :

230ns