FQPF20N06
- Mfr.Part #
- FQPF20N06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 15A TO220F
- Stock
- 566
- In Stock :
- 566
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 30W Tc
- Published :
- 2013
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 30W
- Turn-Off Delay Time :
- 20 ns
- Rise Time :
- 45ns
- Current Rating :
- 15A
- Drain-source On Resistance-Max :
- 0.06Ohm
- Continuous Drain Current (ID) :
- 15A
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Width :
- 4.9mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Series :
- QFET®
- Turn On Delay Time :
- 5 ns
- Fall Time (Typ) :
- 25 ns
- Pulsed Drain Current-Max (IDM) :
- 60A
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Voltage - Rated DC :
- 60V
- Input Capacitance (Ciss) (Max) @ Vds :
- 590pF @ 25V
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 60V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Length :
- 10.36mm
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Case Connection :
- Isolated
- JESD-609 Code :
- e3
- Height :
- 16.07mm
- Vgs (Max) :
- ±25V
- Weight :
- 2.27g
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 7.5A, 10V
- Packaging :
- Tube
- Datasheets
- FQPF20N06
FQPF20N06 Documents

N-Channel Tube 60m Ω @ 7.5A, 10V ±25V 590pF @ 25V 15nC @ 10V TO-220-3 Full Pack
FQPF20N06 Description
The planar stripe and DMOS technologies exclusive to ON Semiconductor Semiconductor are used to create this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. These components are appropriate for applications requiring variable switching power, DC motor control, audio amplifier, and switched mode power supplies.
FQPF20N06 Features
-
15A, 60V, RDS(on) = 60mΩ(Max.) @VGS = 10 V, ID = 7.5A
-
Low gate charge ( Typ. 11.5nC)
-
Low Crss ( Typ. 25pF)
-
100% avalanche tested
-
175°C maximum junction temperature rating
FQPF20N06 Applications
-
LCD TV
-
PDP TV
-
LED TV
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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