FQPF20N06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

30W

Number of Pins :

3

Fall Time (Typ) :

25 ns

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

60A

Lead Free :

Lead Free

Factory Lead Time :

4 Weeks

Drain-source On Resistance-Max :

0.06Ohm

Power Dissipation-Max :

30W Tc

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

ECCN Code :

EAR99

Turn On Delay Time :

5 ns

Element Configuration :

Single

Width :

4.9mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Continuous Drain Current (ID) :

15A

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2013

Mount :

Through Hole

Series :

QFET®

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Mounting Type :

Through Hole

Rise Time :

45ns

Weight :

2.27g

Package / Case :

TO-220-3 Full Pack

Number of Terminations :

3

Turn-Off Delay Time :

20 ns

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Vgs (Max) :

±25V

Case Connection :

Isolated

Height :

16.07mm

Rds On (Max) @ Id, Vgs :

60m Ω @ 7.5A, 10V

Current Rating :

15A

Transistor Application :

SWITCHING

Voltage - Rated DC :

60V

Packaging :

Tube

Transistor Element Material :

SILICON

Length :

10.36mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 25V