FQPF1N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

3.6A

DS Breakdown Voltage-Min :

500V

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

0.9A

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

9Ohm

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Drain to Source Voltage (Vdss) :

500V

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Pbfree Code :

yes

Packaging :

Tube

FET Type :

N-Channel

Series :

QFET®

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

Not Applicable

Rds On (Max) @ Id, Vgs :

9 Ω @ 450mA, 10V

Case Connection :

Isolated

Transistor Application :

SWITCHING

Number of Elements :

1

Avalanche Energy Rating (Eas) :

80 mJ

JESD-609 Code :

e3

Power Dissipation-Max :

16W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

900mA Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Number of Terminations :

3

Transistor Element Material :

SILICON

Surface Mount :

No