FQPF19N20T

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Mfr.Part #
FQPF19N20T
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 100V 11.8A TO220F
Stock
1,000
In Stock :
1,000

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Power Dissipation :
50W
RoHS Status :
RoHS Compliant
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 250μA
Mounting Type :
Through Hole
Packaging :
Tube
Current Rating :
19A
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
150m Ω @ 5.9A, 10V
Power Dissipation-Max :
50W Tc
Voltage - Rated DC :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3 Full Pack
Turn-Off Delay Time :
55 ns
Series :
QFET®
Drive Voltage (Max Rds On,Min Rds On) :
10V
Fall Time (Typ) :
80 ns
Mount :
Through Hole
Rise Time :
190ns
Element Configuration :
Single
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
11.8A Tc
Drain to Source Breakdown Voltage :
200V
Gate to Source Voltage (Vgs) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 25V
Continuous Drain Current (ID) :
11.8A
Datasheets
FQPF19N20T
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF19N20T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, FQPF19N20T pinout, FQPF19N20T datasheet PDF, FQPF19N20T amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF19N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF19N20T


N-Channel Tube 150m Ω @ 5.9A, 10V ±30V 1600pF @ 25V 40nC @ 10V TO-220-3 Full Pack

FQPF19N20T Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1600pF @ 25V.This device has a continuous drain current (ID) of [11.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 55 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Its overall power consumption can be reduced by using drive voltage (10V).

FQPF19N20T Features


a continuous drain current (ID) of 11.8A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 55 ns


FQPF19N20T Applications


There are a lot of ON Semiconductor
FQPF19N20T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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