FQPF19N20CYDTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs (Max) :

±30V

Package / Case :

TO-220-3 Full Pack, Formed Leads

Number of Elements :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Drain to Source Voltage (Vdss) :

200V

Power Dissipation-Max :

43W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

43W

RoHS Status :

RoHS Compliant

Turn On Delay Time :

15 ns

Fall Time (Typ) :

115 ns

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

19A

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

135 ns

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

170m Ω @ 9.5A, 10V

Weight :

2.565g

Packaging :

Tube

Rise Time :

150ns

Mount :

Through Hole

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V