FQPF19N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Series :

QFET®

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Number of Terminations :

3

Width :

4.7mm

Current Rating :

19A

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

115 ns

Power Dissipation :

43W

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Height :

9.19mm

Operating Temperature :

-55°C~150°C TJ

Weight :

2.27g

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

200V

Lead Free :

Lead Free

Power Dissipation-Max :

43W Tc

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Number of Elements :

1

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

200V

Case Connection :

Isolated

Pulsed Drain Current-Max (IDM) :

76A

Continuous Drain Current (ID) :

19A

Pbfree Code :

yes

Mount :

Through Hole

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

53nC @ 10V

Package / Case :

TO-220-3 Full Pack

Rise Time :

150ns

Rds On (Max) @ Id, Vgs :

170m Ω @ 9.5A, 10V

JESD-609 Code :

e3

Turn-Off Delay Time :

135 ns

Length :

10.16mm

Transistor Element Material :

SILICON