FQPF19N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

11.8A Tc

FET Type :

N-Channel

Power Dissipation-Max :

50W Tc

Avalanche Energy Rating (Eas) :

250 mJ

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

200V

Rise Time :

190ns

Turn On Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

150m Ω @ 5.9A, 10V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

55 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Case Connection :

Isolated

REACH SVHC :

No SVHC

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

11.8A

Transistor Application :

SWITCHING

Number of Terminations :

3

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Fall Time (Typ) :

80 ns

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Number of Elements :

1

Current Rating :

19.4A

Pulsed Drain Current-Max (IDM) :

48A

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Transistor Element Material :

SILICON

Threshold Voltage :

5V

Radiation Hardening :

No

Element Configuration :

Single

Voltage - Rated DC :

200V

Packaging :

Tube

Power Dissipation :

50W

Published :

2013

Series :

QFET®

Mount :

Through Hole

Weight :

2.27g