FQPF19N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

2.27g

Published :

2013

Power Dissipation :

50W

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

250 mJ

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Turn On Delay Time :

20 ns

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

55 ns

Number of Pins :

3

Package / Case :

TO-220-3 Full Pack

Fall Time (Typ) :

80 ns

Mount :

Through Hole

Voltage - Rated DC :

200V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

FET Type :

N-Channel

Threshold Voltage :

5V

Packaging :

Tube

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

11.8A Tc

Operating Temperature :

-55°C~150°C TJ

Current Rating :

19.4A

Rise Time :

190ns

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

150m Ω @ 5.9A, 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

200V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pulsed Drain Current-Max (IDM) :

48A

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

11.8A

Vgs (Max) :

±30V

Power Dissipation-Max :

50W Tc