FQPF19N10L

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

Not Applicable

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

100m Ω @ 6.8A, 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Power Dissipation-Max :

38W Tc

Pbfree Code :

yes

Reach Compliance Code :

Unknown

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

1

Series :

QFET®

Vgs (Max) :

±20V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

13.6A

Current - Continuous Drain (Id) @ 25°C :

13.6A Tc

Pulsed Drain Current-Max (IDM) :

54.4A

Surface Mount :

No

Terminal Finish :

MATTE TIN

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pin Count :

3

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.11Ohm

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

220 mJ

Qualification Status :

COMMERCIAL