FQPF19N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

19A

Power Dissipation-Max :

38W Tc

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

13.6A Tc

Voltage - Rated DC :

100V

Pulsed Drain Current-Max (IDM) :

54.4A

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

7.5 ns

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

65 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Continuous Drain Current (ID) :

13.6A

Case Connection :

Isolated

Avalanche Energy Rating (Eas) :

220 mJ

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

100m Ω @ 6.8A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-220-3 Full Pack

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Rise Time :

150ns

Turn-Off Delay Time :

20 ns

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Series :

QFET®

Weight :

2.27g

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Mount :

Through Hole

Radiation Hardening :

No

Vgs (Max) :

±25V

JESD-609 Code :

e3

Power Dissipation :

38W

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3