FQPF18N20V2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.14Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Power Dissipation-Max :

40W Tc

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

18A

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Rds On (Max) @ Id, Vgs :

140m Ω @ 9A, 10V

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

340 mJ

Drain to Source Voltage (Vdss) :

200V

Number of Terminations :

3

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

QFET®

Pin Count :

3

Qualification Status :

COMMERCIAL

Number of Elements :

1

Case Connection :

Isolated

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

200V

Pulsed Drain Current-Max (IDM) :

72A

Package / Case :

TO-220-3 Full Pack

Surface Mount :

No