FQPF18N20V2

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

18A

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Power Dissipation-Max :

40W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.14Ohm

Pulsed Drain Current-Max (IDM) :

72A

Number of Terminations :

3

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

200V

Number of Elements :

1

Packaging :

Tube

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Pbfree Code :

yes

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Series :

QFET®

Pin Count :

3

Surface Mount :

No

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

340 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1.08pF @ 25V

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

140m Ω @ 9A, 10V

Package / Case :

TO-220-3 Full Pack