FQPF17P06
- Mfr.Part #
- FQPF17P06
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 12A TO220F
- Stock
- 79,835
- In Stock :
- 79,835
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Series :
- QFET®
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- MATTE TIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pin Count :
- 3
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e3
- Qualification Status :
- COMMERCIAL
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 48A
- Vgs (Max) :
- ±25V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 39W Tc
- Drain-source On Resistance-Max :
- 0.12Ohm
- Case Connection :
- Isolated
- DS Breakdown Voltage-Min :
- 60V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 6A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Avalanche Energy Rating (Eas) :
- 300 mJ
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Pbfree Code :
- yes
- Surface Mount :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 60V
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 12A
- Datasheets
- FQPF17P06
FQPF17P06 Documents

P-Channel Tube 120m Ω @ 6A, 10V ±25V 900pF @ 25V 27nC @ 10V 60V TO-220-3 Full Pack
FQPF17P06 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 48A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQPF17P06 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 48A.
a 60V drain to source voltage (Vdss)
FQPF17P06 Applications
There are a lot of Rochester Electronics, LLC
FQPF17P06 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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