FQPF17P06
- Mfr.Part #
- FQPF17P06
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 12A TO220F
- Stock
- 79,835
- In Stock :
- 79,835
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 3
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Power Dissipation-Max :
- 39W Tc
- Drain to Source Voltage (Vdss) :
- 60V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 6A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Drain Current-Max (Abs) (ID) :
- 12A
- Vgs (Max) :
- ±25V
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Packaging :
- Tube
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Avalanche Energy Rating (Eas) :
- 300 mJ
- DS Breakdown Voltage-Min :
- 60V
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Number of Elements :
- 1
- Qualification Status :
- COMMERCIAL
- Pulsed Drain Current-Max (IDM) :
- 48A
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.12Ohm
- Datasheets
- FQPF17P06

P-Channel Tube 120m Ω @ 6A, 10V ±25V 900pF @ 25V 27nC @ 10V 60V TO-220-3 Full Pack
FQPF17P06 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 12A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 48A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
FQPF17P06 Features
the avalanche energy rating (Eas) is 300 mJ
based on its rated peak drain current 48A.
a 60V drain to source voltage (Vdss)
FQPF17P06 Applications
There are a lot of Rochester Electronics, LLC
FQPF17P06 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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