FQPF16N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rise Time :

130ns

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Series :

QFET®

Mount :

Through Hole

Current Rating :

16A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

2.27g

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.8A, 10V

Continuous Drain Current (ID) :

15.6A

Radiation Hardening :

No

Power Dissipation :

43W

Drain-source On Resistance-Max :

0.27Ohm

Length :

10.16mm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Height :

9.19mm

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15 ns

Case Connection :

Isolated

Turn-Off Delay Time :

135 ns

Gate to Source Voltage (Vgs) :

30V

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

43W Tc

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Lead Free :

Lead Free

Mounting Type :

Through Hole

Number of Terminations :

3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

53.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

7 Weeks

Fall Time (Typ) :

105 ns

Number of Elements :

1

FET Type :

N-Channel

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Pulsed Drain Current-Max (IDM) :

62.4A

Voltage - Rated DC :

250V

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Drain to Source Breakdown Voltage :

250V

Vgs (Max) :

±30V

Published :

2004