FQPF16N25

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Mfr.Part #
FQPF16N25
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 250V 9.5A TO220F
Stock
20,141
In Stock :
20,141

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
43W Tc
Pulsed Drain Current-Max (IDM) :
62.4A
Voltage - Rated DC :
250V
Drain-source On Resistance-Max :
0.27Ohm
Terminal Finish :
Tin (Sn)
Series :
QFET®
Turn-Off Delay Time :
135 ns
Current Rating :
16A
Case Connection :
Isolated
Package / Case :
TO-220-3 Full Pack
Width :
4.7mm
Element Configuration :
Single
Weight :
2.27g
Number of Pins :
3
Rise Time :
130ns
Published :
2004
Gate Charge (Qg) (Max) @ Vgs :
53.5nC @ 10V
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Gate to Source Voltage (Vgs) :
30V
Factory Lead Time :
7 Weeks
Mounting Type :
Through Hole
Packaging :
Tube
Height :
9.19mm
Length :
10.16mm
JESD-609 Code :
e3
Fall Time (Typ) :
105 ns
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
270m Ω @ 7.8A, 10V
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±30V
ECCN Code :
EAR99
Lead Free :
Lead Free
Number of Terminations :
3
Input Capacitance (Ciss) (Max) @ Vds :
1080pF @ 25V
Transistor Application :
SWITCHING
Power Dissipation :
43W
Continuous Drain Current (ID) :
15.6A
Number of Elements :
1
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
250V
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
15.6A Tc
Turn On Delay Time :
15 ns
Datasheets
FQPF16N25
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF16N25 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, FQPF16N25 pinout, FQPF16N25 datasheet PDF, FQPF16N25 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQPF16N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQPF16N25


N-Channel Tube 270m Ω @ 7.8A, 10V ±30V 1080pF @ 25V 53.5nC @ 10V TO-220-3 Full Pack

FQPF16N25C  Description


  This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

 



FQPF16N25C    Features

 

15.6A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 7.8A

Low gate charge ( Typ. 41nC)

Low Crss ( Typ. 68pF)

100% avalanche tested

 

FQPF16N25C      Applications

  LED TV

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