FQPF16N25
- Mfr.Part #
- FQPF16N25
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 9.5A TO220F
- Stock
- 20,141
- In Stock :
- 20,141
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 43W Tc
- Pulsed Drain Current-Max (IDM) :
- 62.4A
- Voltage - Rated DC :
- 250V
- Drain-source On Resistance-Max :
- 0.27Ohm
- Terminal Finish :
- Tin (Sn)
- Series :
- QFET®
- Turn-Off Delay Time :
- 135 ns
- Current Rating :
- 16A
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.7mm
- Element Configuration :
- Single
- Weight :
- 2.27g
- Number of Pins :
- 3
- Rise Time :
- 130ns
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 53.5nC @ 10V
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 7 Weeks
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Height :
- 9.19mm
- Length :
- 10.16mm
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 105 ns
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 7.8A, 10V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1080pF @ 25V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 43W
- Continuous Drain Current (ID) :
- 15.6A
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 250V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 15.6A Tc
- Turn On Delay Time :
- 15 ns
- Datasheets
- FQPF16N25

N-Channel Tube 270m Ω @ 7.8A, 10V ±30V 1080pF @ 25V 53.5nC @ 10V TO-220-3 Full Pack
FQPF16N25C Description
This N-channel enhanced power MOSFET is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
FQPF16N25C Features
15.6A, 250V, RDS(on) = 270mΩ(Max.) @VGS = 10 V, ID = 7.8A
Low gate charge ( Typ. 41nC)
Low Crss ( Typ. 68pF)
100% avalanche tested
FQPF16N25C Applications
LED TV
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